A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low RESET Current and Power Consumption
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2006-07-25
著者
-
Sone Hayato
Department Of Production Science Technology Graduate School Of Engineering Gunma University
-
Hosaka Sumio
Department Of Production Science Technology Graduate School Of Engineering Gunma University
-
Yin You
Department Of Production Science Technology Graduate School Of Engineering Gunma University
-
NIIDA Daisuke
Department of Nano-material Systems, Graduate School of Engineering, Gunma University
-
MIYACHI Akihira
Department of Nano-material Systems, Graduate School of Engineering, Gunma University
-
Niida Daisuke
Department Of Nano-material Systems Graduate School Of Engineering Gunma University
関連論文
- Extremely Small Proximity Effect in 30keV Electron Beam Drawing with Thin Calixarene Resist for 20 x 20nm^2 Pitch Dot Arrays
- Ultra Low Operation Current Lateral Phase-Change Memory
- A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low RESET Current and Power Consumption
- Memory Effect in Metal-Chalcogenide-Metal Structures for Ultrahigh-Density Nonvolatile Memories
- Finite Element Analysis of Dependence of Programming Characteristics of Phase-Change Memory on Material Properties of Chalcogenides
- Simulation of Proposed Confined-Chalcogenide Phase-Change Random Access Memory for Low Reset Current by Finite Element Modelling
- Electrical Properties of Phase Change and Channel Current Control in Ultrathin Phase-Change Channel Transistor Memory by Annealing (Special Issue: Solid State Devices & Materials)
- Annealing effect of phase change and current control in phase change channel transistor memory
- Dependences of Electrical Properties of Thin GeSbTe and AgInSbTe Films on Annealing
- Highly Precise Atomic Force Microscope Measurement of High-Aspect Nanostructure Free of Probe Bending Error
- Atomic Force Microscopy for High Aspect Ratio Structure Metrology
- Ultrahigh Vacuum Non-Contact Atomic Force Microscope Observation of Reconstructed Si(110) Surface
- Prototype of Atomic Force Cantilevered SNOM Based on Though-The-Lens-Type Optical Lever and Polarized Illumination and Detection System
- Critical-Dimension Measurement using Multi-Angle-Scanning Method in Atomic Force Microscope
- Side-Wall Measurement using Tilt-Scanning Method in Atomic Force Microscope
- Terabits Patterning : Electron beam drawing with a bit pitch and track pitch of 25nm
- Terabits Patterning : Electron beam drawing with a bit pitch and track pitch of 25nm
- Terabits Patterning : Electron beam drawing with a bit pitch and track pitch of 25nm(Patterned media & MRAM,The 8th Asian Symposium on Information Storage Technology (ASIST-8))
- Picogram Mass Sensor Using Resonance Frequency Shift of Cantilever
- Picogram Mass Sensor Using Piezoresistive Cantilever for Biosensor
- Growth Kinetics of Silicon Carbide Chemical Vapor Deposition from Methyltrichlorosilane
- Far-Field and Near-Field Optical Readings of under-50nm-Sized Pits : Optics and Quantum Electronics
- Simulation of Proposed Confined-Chalcogenide Phase-Change Random Access Memory for Low Reset Current by Finite Element Modelling
- A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low Reset Current and Power Consumption
- Finite Element Analysis of Dependence of Programming Characteristics of Phase-Change Memory on Material Properties of Chalcogenides
- Electrical Properties of Phase Change and Channel Current Control in Ultrathin Phase-Change Channel Transistor Memory by Annealing