A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low Reset Current and Power Consumption
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概要
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We have fabricated and studied single lateral phase-change random-access-memory (PRAM), which has a confined Ge2Sb2Te5 (GST) channel connected by two wide TiN electrodes of relatively low resistivity. Its switching current for Reset operation could be as low as 4–20 μA, about one or two orders of magnitude lower than that of the conventional bottom contact PRAM cell. Its corresponding switching power for Reset operation is about 2–4 μW. The reason for such ultra low Reset current and power could be that Joule heating occurred mainly in the GST channel, instead of the resistive heater in the conventional PRAM cell.
- 2006-07-25
著者
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Sone Hayato
Department Of Applied Physics The Science University Of Tokyo
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Yin You
Department Of Production Science Technology Graduate School Of Engineering Gunma University
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MIYACHI Akihira
Department of Nano-material Systems, Graduate School of Engineering, Gunma University
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Niida Daisuke
Department Of Nano-material Systems Graduate School Of Engineering Gunma University
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Hosaka Sumio
Department Of Electronic Engineering Gunma University
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Yin You
Department of Nano-Material Systems, Graduate School of Engineering, Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 376-8515, Japan
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