Terabits Patterning : Electron beam drawing with a bit pitch and track pitch of 25nm(Patterned media & MRAM,The 8th Asian Symposium on Information Storage Technology (ASIST-8))

概要

論文の詳細を見る
We describe the prospect of terabits patterning for ultrahigh density patterned media. The possibility to form very fine pits or dots with a bit pitch and track pitch of 25nm has been researched using a electron beam drawing system and positive and negative EB resists of ZEP520 and calixarene, respectively. Furthermore, we have researched pattern transfer to silicon substrate by a reactive ion etching (RIE). As experimental results, we successfully obtained very small dot with a diameter of around 13nm, and ultrahigh density dot arrays with the 25nm pitch using calixarene resist. We also obtained silicon dot column arrays with the 25nm pitch by CF_4 RIE. The calixarene resist is very suitable to form an ultrahigh packed dot arrays pattern, so that the formation promises to open the terabits storage.
社団法人電子情報通信学会の論文
2006-11-02