Orientation-controlled and long-range-ordered self-assembled nanodot array for ultrahigh-density bit-patterned media (Special issue: Microprocesses and nanotechnology)
スポンサーリンク
概要
著者
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HOSAKA Sumio
Graduate school of Engineering, Gunma University
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Yin You
Graduate School of Engineering, Gunma University, Kiryu, Gunma 376-8515, Japan
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Akahane Takashi
Graduate School of Engineering, Gunma University, Kiryu, Gunma 376-8515, Japan
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Huda Miftakhul
Graduate School of Engineering, Gunma University, Kiryu, Gunma 376-8515, Japan
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Tamura Takuro
Graduate School of Engineering, Gunma University, Kiryu, Gunma 376-8515, Japan
関連論文
- Terabits Patterning : Electron beam drawing with a bit pitch and track pitch of 25nm
- Terabits Patterning : Electron beam drawing with a bit pitch and track pitch of 25nm
- Terabits Patterning : Electron beam drawing with a bit pitch and track pitch of 25nm(Patterned media & MRAM,The 8th Asian Symposium on Information Storage Technology (ASIST-8))
- Orientation-controlled and long-range-ordered self-assembled nanodot array for ultrahigh-density bit-patterned media (Special issue: Microprocesses and nanotechnology)
- Possibility of Forming 18-nm-Pitch Ultrahigh Density Fine Dot Arrays for 2 Tbit/in.2 Patterned Media Using 30-keV Electron Beam Lithography
- Low-Reset-Current Ring-Confined-Chalcogenide Phase Change Memory
- Fabrication of 5-nm-Sized Nanodots Using Self-Assembly of Polystyrene--Poly(dimethylsiloxane)
- Electron Beam Lithography of 15\times 15 nm2 Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer
- Possibility of Freely Achievable Multilevel Storage of Phase-Change Memory by Staircase-Shaped Pulse Programming
- Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution
- Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution