Low-Reset-Current Ring-Confined-Chalcogenide Phase Change Memory
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概要
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In this study, we proposed a ring-shaped confined chalogenide (RCC) phase change memory (PCM) cell to reduce the reset current compared with a conventional normal bottom contact (NBC) cell and a conventional normal confined chalogenide (CC) cell. The finite element analysis of the proposed RCC cell was systematically conducted depending on the radius of the center SiO2 cylinder, surrounded by the phase change material. The highest temperature at different programming currents markedly increases by increasing the radius of the SiO2 cylinder. On the basis of the simulated relationships between the cell resistance and the programming current, it was demonstrated that the derived reset current of the RCC cell can be reduced to 41% of that of the conventional NBC PCM cell.
- 2012-10-25
著者
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HOSAKA Sumio
Graduate school of Engineering, Gunma University
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Hosaka Sumio
Graduate School of Engineering, Gunma University, Kiryu, Gunma 376-8515, Japan
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Yin You
Graduate School of Engineering, Gunma University, Kiryu, Gunma 376-8515, Japan
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