Fabrication of 5-nm-Sized Nanodots Using Self-Assembly of Polystyrene--Poly(dimethylsiloxane)
スポンサーリンク
概要
- 論文の詳細を見る
In this work, we studied the self-assembly development of a polystyrene--poly(dimethylsiloxane) (PS--PDMS) block copolymer with molecular weight of 7,000--1,500, which has potential to form nanodots with size of several nanometers. Annealing time and temperature were intensively investigated. Distinct nanodots with a size of 6 nm and a pitch of 13 nm were obtained at a low annealing temperature of 130 °C, and nanodots with a size of 5 nm and a pitch of 12 nm were obtained at an annealing temperature of 170 °C. It was found that nanodots were formed when annealing time was reduced to as short as 6 h. This technique implies the possible high-throughput and low-cost fabrication of magnetic recording media with a density of up to 5.17 Tbit/in.2.
- 2012-06-25
著者
-
HOSAKA Sumio
Graduate school of Engineering, Gunma University
-
Yin You
Graduate School of Engineering, Gunma University, Kiryu, Gunma 376-8515, Japan
-
Huda Miftakhul
Graduate School of Engineering, Gunma University, Kiryu, Gunma 376-8515, Japan
-
Liu Jing
Graduate School of Engineering, Gunma University, Kiryu, Gunma 376-8515, Japan
関連論文
- Terabits Patterning : Electron beam drawing with a bit pitch and track pitch of 25nm
- Terabits Patterning : Electron beam drawing with a bit pitch and track pitch of 25nm
- Terabits Patterning : Electron beam drawing with a bit pitch and track pitch of 25nm(Patterned media & MRAM,The 8th Asian Symposium on Information Storage Technology (ASIST-8))
- Orientation-controlled and long-range-ordered self-assembled nanodot array for ultrahigh-density bit-patterned media (Special issue: Microprocesses and nanotechnology)
- Possibility of Forming 18-nm-Pitch Ultrahigh Density Fine Dot Arrays for 2 Tbit/in.2 Patterned Media Using 30-keV Electron Beam Lithography
- SO2 Emission Analysis of China with Input-Output Model
- Low-Reset-Current Ring-Confined-Chalcogenide Phase Change Memory
- Fabrication of 5-nm-Sized Nanodots Using Self-Assembly of Polystyrene--Poly(dimethylsiloxane)
- Electron Beam Lithography of 15\times 15 nm2 Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer
- Possibility of Freely Achievable Multilevel Storage of Phase-Change Memory by Staircase-Shaped Pulse Programming
- Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution
- Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution