Preparation of BaTiO3 Films on Si Substrate with MgO Buffer Layer by RF Magnetron Sputtering
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概要
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Highly (002)- or (200)-oriented BaTiO3 thin films were successfully grown on a Si substrate with a MgO buffer layer by RF magnetron sputtering. The deposition parameters need to be stringently controlled in order to grow BaTiO3 films with good crystallinity. The sputtering parameters such as substrate temperature, RF power, gas flow ratio, and deposition pressure were varied to obtain the optimum deposition conditions for the BaTiO3 films. The as-deposited films were characterized by X-ray diffraction analysis and atomic force microscopy to analyze their crystalline structure and surface morphology. The full width at half maximum intensity of the BaTiO3 (002) or (200) peak of the sample fabricated under the optimum deposition parameters was only 0.28°. The surface roughness of the BaTiO3 films was about 3.2 nm. The results could be useful in the integration of ferroelectric and semiconductor devices on the same Si substrate.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-09-25
著者
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Shih Wen-ching
Graduate Institute In Electro-optical Engineering Tatung Univ.
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Wu Mu-shiang
Graduate Institute In Electro-optical Engineering Tatung University
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Liang Yuan-Sung
Graduate Institute in Electro-Optical Engineering, Tatung University, No. 40, Sec. 3, Chungshan North Road, Taipei 104, Taiwan, R.O.C.
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