Growth of $c$-Axis-Oriented LiNbO3 Films on ZnO/SiO2/Si Substrate by Pulsed Laser Deposition for Surface Acoustic Wave Applications

概要

論文の詳細を見る
Highly $c$-axis-oriented LiNbO3(006) thin films were successfully grown on SiO2/Si substrates with a ZnO buffer layer by XeCl excimer pulsed laser deposition (PLD). The as-deposited films were characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy to analyze their crystalline structure and surface morphology. The results show that the highly $c$-axis-oriented LiNbO3 thin films of 2.5 μm thickness were successfully grown on SiO2/Si substrates with a ZnO buffer layer by PLD. The full width at half maximum intensity of the LiNbO3(006) peak of the sample fabricated under the optimum deposition conditions is only 0.18°. The center frequency of the LiNbO3/ZnO/SiO2/Si substrate with line width of 4 μm is 188 MHz, and the phase velocity is 3010 m/s, which is slightly lower than that of the 36° $Y$–$X$ LiNbO3 substrate.
2008-05-25