Fabrication of Transparent CuCrO
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概要
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Transparent p--n junctions composed of zinc oxide and magnesium-doped copper--chromium oxide thin films were prepared using radio-frequency (RF) magnetron sputtering deposition on indium--tin oxide glass substrates. The temperature of the substrate during deposition was varied to examine differences in the diode characteristics of the current--voltage response effect. The crystalline structure of the diode films was verified using X-ray diffraction (XRD) analysis. The ratio of the forward current to the reverse current reached 85.9 in the range of +4 to -4 V at a deposition temperature of 450 °C. The p--n junction diode film had an optical transparency above 75% for wavelengths in the visible range.
- 2013-05-25
著者
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Shih Wen-ching
Graduate Institute In Electro-optical Engineering Tatung Univ.
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Wu Mu-shiang
Graduate Institute In Electro-optical Engineering Tatung University
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Wu Mu-Shiang
Graduate Institute of Electro-Optical Engineering, Tatung University, Taipei 104, Taiwan
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Chen Li-Fong
Graduate Institute of Electro-Optical Engineering, Tatung University, Taipei 104, Taiwan
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Wang Yung-Po
Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan
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Chiu Te-Wei
Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan
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Shih Wen-Ching
Graduate Institute of Electro-Optical Engineering, Tatung University, Taipei 104, Taiwan
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