2P3-10 Al_2O_3膜/Si基板上に形成したZnO薄膜SAWデバイスの特性(ポスターセッション)

概要

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ZnO films with c-axis (0002) orientation have been successfully grown by RF magnetron sputtering on interdigital transducer (IDT)/Al_2O_3/SiO_2/Si substrates. The Al_2O_3 films were deposited on SiO_2/Si substrates by electron beam evaporation. Crystalline structures of the films were investigated by X-ray diffraction, atomic force microscopy and scanning electron microscopy. The 2^<nd>-order phase velocity of the surface acoustic wave (SAW) device with a 7.5μm thick Al_2O_3 buffer layer was measured to be about 5432m/s, which approaches that (5840m/s) of ZnO/IDT/sapphire. The experimental result is beneficial to replace the expensive single crystalline sapphire substrate with Al_2O_3 buffer layer at lower cost for the high frequency SAW devices, and is also useful to integrate the semiconductor and high frequency SAW devices on the same Si substrate.
超音波エレクトロニクスの基礎と応用に関するシンポジウム運営委員会の論文
2009-11-18