2-06P-34 SAW応用を目指したZnO/SiO_2/Si上へのPLD法によるC軸配向LiNbO_3膜の堆積(ポスターセッション 2)
スポンサーリンク
概要
- 論文の詳細を見る
Highly c-axis oriented LiNbO_3 (006) thin films with thickness of 2.5 μm have been successfully grown on SiO_2/Si substrates with a ZnO buffer layer by XeCl excimer pulsed laser deposition (PLD) technique. The full width at half maximum intensity (FWHM) of LiNbO_3 (006) peak of the sample fabricated under the optimum deposition parameters is only 0.18°. The center frequency and phase velocity of the LiNbO_3/ZnO/SiO_2/Si substrate with line width of 4μm is 188 MHz and 3010 m/s, respectively.
- 超音波エレクトロニクスの基礎と応用に関するシンポジウム運営委員会の論文
- 2007-11-14
著者
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Shih Wen-Ching
Graduate Institute in Electro-Optical Engineering, Tatung University
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Shih Wen‐ching
Tatung Univ.
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Shih Wen-ching
Graduate Institute In Electro-optical Engineering Tatung Univ.
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Wang Tzyy-long
Graduate Institute In Electro-optical Engineering Tatung University
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Wang Tzyy-long
Graduate Program In Electro-optical Engineering Tatung University
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Sun Xiao-yun
Graduate Program In Electro-optical Engineering Tatung University
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Wu Mu-Shiang
Graduate Program in Electro-Optical Engineering, Tatung University
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Wu Mu-shiang
Graduate Institute In Electro-optical Engineering Tatung University
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Sun Xiao-Yun
Graduate Institute in Electro-Optical Engineering, Tatung University, No. 40, Sec. 3, Chungshan North Road, Taipei 104, Taiwan, R.O.C.
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