Characteristics of ZnO Thin Film Surface Acoustic Wave Devices Fabricated Using Al2O3 Films on Silicon Substrates
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概要
- 論文の詳細を見る
ZnO films with a $c$-axis (0002) orientation have been successfully grown by RF magnetron sputtering on interdigital transducer (IDT)/Al2O3/SiO2/Si substrates. Al2O3 films were deposited on SiO2/Si substrates by electron beam evaporation. The crystalline structure and surface roughness of the films were investigated by X-ray diffraction and atomic force microscopy, respectively. The second-order phase velocity of a surface acoustic wave (SAW) device with a 7.5-μm-thick Al2O3 film was measured to be about 5432 m/s, which approaches (93%) that (5840 m/s) of ZnO/IDT/sapphire. This experimental result indicates that a low-cost Al2O3 film can be used to replace an expensive single-crystalline sapphire substrate for the fabrication of high-frequency SAW devices and is also useful in the integration of semiconductor and high-frequency SAW devices on the same Si substrate.
- 2010-07-25
著者
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Shih Wen-ching
Graduate Institute In Electro-optical Engineering Tatung Univ.
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Wang Tzyy-long
Graduate Institute In Electro-optical Engineering Tatung University
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Chu Ming-hsien
Graduate Institute In Electro-optical Engineering Tatung University
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Chu Ming-Hsien
Graduate Institute in Electro-Optical Engineering, Tatung University, No. 40, Sec. 3, Chungshan North Road, Taipei 104, Taiwan, R.O.C.
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