High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source
スポンサーリンク
概要
- 論文の詳細を見る
We measured a spin-dependent luminescence from a GaAs–GaAsP strained layer superlattice and GaAs substrate to evaluate the spin polarization of conduction band electrons excited by circularly polarized light. The GaAs–GaAsP strained layer superlattice with a mixture of group-V elements, As and P, was considered as a suitable spin-polarized electron source because the discrepancy of the valence band was reported to be larger than that of the conduction band. The observed maximum circular polarizations of the luminescence from the GaAs–GaAsP strained layer superlattice and GaAs substrate were 68% and 15%, respectively. The dependence of the circular polarization of the luminescence on the excitation photon energy was well explained by the calculated band structure. The initial spin polarizations of conduction band electrons excited in the GaAs–GaAsP strained layer superlattice and GaAs substrate were estimated to be 95% and 46%, respectively, from the luminescence polarization, lifetime and spin relaxation time. The high initial spin polarization of conduction band electrons proved the high performance of a photocathode with the GaAs–GaAsP strained layer superlattice as the spin-polarized electron source.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-06-15
著者
-
SAKA Takashi
Department of Electrical and Electronic Engineering, Daido Institute of Technology
-
Horinaka Hiromichi
Department Of Electrical Engineering College Of Engineering University Of Osaka Prefecture
-
OKUMI Shoji
Department of Physics, Nagoya University
-
Kato Toshihiro
Research And Development Lab. Daido Steel Co. Ltd.
-
Takikita Hisaya
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
-
Matsuyama Tetsuya
Department Of Physics & Electronics Osaka Prefecture University
-
Nishitani Tomohiro
Department Of Physics Faculty Of Science Nagoya University
-
Wada Kenji
Department Of Energy And Hydrocarbon Chemistry Graduate School Of Engineering Kyoto University
-
Nakanishi Tsutomu
Department Of Materials Sciences Waseda Universit
-
Horinaka Hiromichi
Department of Physics and Electronics, Faculty of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
-
Okumi Shoji
Department of Physics, Faculty of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
-
Matsuyama Tetsuya
Department of Physics and Electronics, Faculty of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
-
Kato Toshihiro
Research & Development Laboratory, Daido Steel Co., Ltd., 2-30 Daido-cho, Minami-ku, Nagoya 457-8545, Japan
-
Saka Takashi
Department of Applied Electronics, Daido Institute of Technology, 2-21 Daido-cho, Minami-ku, Nagoya 457-8531, Japan
-
Takikita Hisaya
Department of Physics and Electronics, Faculty of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
-
Nakanishi Tsutomu
Department of Materials Science and Engineering, Waseda University, Tokyo 169-8555, Japan
-
Nakanishi Tsutomu
Department of Physics, Faculty of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
-
SAKA Takashi
Department of Applied Electronics, Daido Institute of Technology
-
OKUMI Shoji
Department of Physics, Faculty of Science, Nagoya University
関連論文
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : II. Strain in GaAsP Layer
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : I. Mosaic Structure
- Photoconductivity Decay Characteristics of Undoped p-Type CuGaS_2
- A New Method for Measuring Optical Activity in Crystals and Its Application to Quartz
- Optical Band-Pass Filter Using Accidental Isotropy and Optical Activity of AgGaSe_2
- Piezoelectric Coefficients of AgGaSe_2
- Linear Electro-Optic Effect of AgGaSe_2
- Natural Optical Activity of AgGaSe_2. : CHALCOPYRITES : ELECTRICAL AND OPTICAL PROPERTIES
- Application of Modulated Phase-Shift-Difference Method with Rotating Quarter-Wave Plate to CuGaS_2
- Construction and Performance of a Large-Aperture Wire-Chamber Spectrometer for Pion Scattering Experiments at KEK
- First-principles Study on the Stable Molecular Structures of Disulfide Peptide Nanotubues
- Near-Infrared Tomography by Detection of Ultrasonic Pulse Shift for Tissue Diagnosis
- Evaluation of Surface Fatigue Strength Based on Surface Temperature (Surface Temperature Calculation for Rolling-Sliding Contact)
- Evidence of Correlation between Dark Spots and Dislocations Originating from Substrate in Light-Emitting Diodes
- Temperature Dependence of Tetragonal Distortion and Crystal Field Splitting in CuGaS_2
- Photoluminescence Properties of CuGaSe_2 Grown by Iodine Vapour Transport
- A Measurement of Polarization Characteristics of Anisotropic Emission Source
- Excitonic Structure of CuGaS_Se_ and CuAlS_Se_
- Optical Band-Pass Filter Using Accidental Isotropy and Optical Activity of AgGaSe_2 (II)
- Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
- Practical Use of Easy Raman Spectrometer Equipped with AgGaSe_2 Filter and GaAlAs Laser Diode
- Spin Relaxation of Electrons in Strained-GaAs-Layer Photocathode of Polarized Electron Source
- A New Self-Assembled Porphyrin-Silver(I) Network
- Surface Durability of Developed Cr-Mo-Si Steel under Rolling-Sliding Contact
- New-Type Photocathode for Polarized Electron Source with Distributed Bragg Reflector
- Current Status of Infrared Technology
- A criterion for Applying Chalcopyrite Semiconductors to Optical Line Elimination Filters
- Channeling Radiation from 1 MeV Electrons
- Fe(CO)_5/Sulfur-Catalyzed Liquefaction of Yallourn Coal in Syngas-Water Systems
- High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source
- High Luminescence Polarization of InGaAs-AlGaAs Strained Layer Superlattice Fabricated as a Photocathode of Spin-Polarized Electron Source : Optical Properties of Condensed Matter
- Spin-Dependent Luminescence of Highly Polarized Electrons Generated by Two-Photon Absorption in Semiconductors : Optical Properties of Condensed Matter
- Spin Relaxation of Electrons in Graded Doping Strained GaAs-Layer Photocathode of Polarized Electron Source
- Spin Dependent Luminescence of GaAs Thin Layers under Tensile Strain and Compressive Strain Induced by Interface ess
- Circular Polarization of Photoluminescence Excitation Spectra of Strained GaAs Layer
- GDS-17 ENHANCEMENT OF BENDING LOAD CARRYING CAPACITY OF GEARS USING AN ASYMMETRIC INVOLUTE TOOTH(GEAR DESIGN AND SYNTHESIS)
- Bending Load Capacity Enhancement Using an Asymmetric Tooth Profile : 1st Report, Influences of Pressure Angle on Tooth Root Stress and Bending Stiffness
- GSD-09 INFLUENCES OF SURFACE TEXTURE AND LUBRICATING OIL TEMPERATURE ON SURFACE FAILURE OF ROLLING-SLIDING CONTACT IN THE CASE OF CASE-CARBURIZED ALLOY STEELS(GEAR STRENGTH AND DURABILITY, INCLUDING GEAR MATERIALS AND HEAT TREATMENT TECHNIQUES)
- GSD-19 RELATION BETWEEN SURFACE TEMPERATURE AND SURFACE DAMAGE IN ROLLING-SLIDING CONTACT OF THE CASE-CARBURIZED ALLOY STEEL(GEAR STRENGTH AND DURABILITY)
- Magnetic Ordering,Orbital State and Lattice Distortion in Perovskite Manganites
- Suppression of Side Fringes in Low-Coherence Interferometric Measurements Using Gain- or Loss-Modulated Multimode Laser Diodes
- Optical Imaging in Scattering Medium by Detection of Ultrasonic Phase Shift Due to Light Illumination
- Optical Computed Tomography Based on Extraction of Quasi-Straightforward Propagating Photons Using Sum-Frequency Generation Technique
- Influence of Nonlinear Gain Saturation on the Time-Bandwidth Product of Optical Pulse from a Gain-Switched Semiconductor Laser
- Extraction of Quasi-Straightforward-Propagating Photons Through a Scattering Medium by Up-Conversion Method as a Coherent Light Detection Technique
- Optical Computed Tomography Imaging of Absorbers in a Highly Scattering Medium by Detection of Photons Preserving Initial Polarization
- Improvement of Lambert-Beer Law Dynamic Range by the Use of Temporal Gates on Transmitted Light Pulse Through a Scattering Medium
- Preparation of Microporous Ga-Si-O Materials with Acidic Sites from a Gallium-Bridged Silsesquioxane
- Synthesis of Novel Group 4 Metallocene-Containing Silsesquioxanes with a Vinyl Group
- Synthesis of Microporous Ti-Si-O Materials from a Titanium-containing Oligosilsesquioxane
- Fe(CO)_5/Sulfur-Catalyzed Liquefaction of Yallourn Coal in the Presence of Alcohol and Carbon Monoxide
- Fe(CO)_5/Sulfur-Catalyzed Coal Liquefaction Using H_2O-CO as a Hydrogen Source
- Synthesis of Novel Organic-Inorganic Hybrid Cages via Cobalt-catalyzed Cyclotrimerization of Dimethylethynylsilyl Groups on a Silsesquioxane
- Ruthenium Complex-catalyzed Oxidative Cyclization of 4-Penten-1-ols
- Synthesis of Novel Ruthenium and Rhodium Complexes with a Silsesquioxane-Based Phosphine Ligand
- Synthesis of Cooligomers of Titanium-Bridged Silsesquioxanes and Octakis(hydridosilsesquioxane)
- Performance of AgGaS_2 Crystal Filter for Raman Spectroscopy
- Temperature Dependence of Photoconductivity Spectra and Phase Lag of p-Type CuGaS_2 by Polarized Light Excitation
- Correlation between the Relative Sensitivity Factors and the Sputtering Yields in Glow-Discharge Mass Spectrometry
- Characterization and Mode of Action of Exo-1,3-β-D-Glucanase from Aspergillus saitoi
- Quantitative Analysis of Strain in Silicon Crystals Using X-ray Pendellosung Oscillations
- Measurement of the Spin Correlation Parameters A_ and A_ of Proton-Proton Scattering at 47.5 MeV
- Tunable Optical Band Pass Filter Using Optically Active and Biaxial Crystals
- Theoretical Study on Amphi-Ionophorability of Peptide Nanorings
- Vanadium-containing Silsesquioxane-catalyzed Photo-assisted Oxidation of Hydrocarbons
- α-Parameter Dependence of Chirped Pulse from Injection-Modulated Semiconductor Lasers
- Development of Highly Reliable Point Source Infrared Light-Emitting Diodes and Analysis Using a New Parameter of Dark Area Ratio
- Extraction and Spectrophotometric Determination of Cobalt(II) with Quinoline-2-carbaldehyde 2-(5-Nitro)pyridylhydrazone
- High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction: II. Strain in GaAsP Layer
- Spectroscopic Three-Dimensional Imaging of Light Scattering Medium by Detection of Ultrasonic Velocity Change owing to Light Illumination
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction: I. Mosaic Structure
- Numerical Investigation of Method of Reconstructing Gain-Switched Picosecond Pulses from Laser Diodes without Autocorrelation Measurements
- Imaging of Ultrasonic Velocity Change Corresponding to Optical Absorption Distribution
- Evidence of Correlation between Dark Spots and Dislocations Originating from Substrate in Light-Emitting Diodes
- Difference in Self-Assembling Morphology of Peptide Nanorings
- IR Study on Stacking Manner of Peptide Nanorings in Peptide Nanotubes
- Theoretical Prediction and Atomic Force Microscope Observations of the Protein Nanotube Consisting of Homo-l-Amino Acid Penta-Peptide Nanorings
- Quantitative Analysis of Strain in Silicon Crystals Using X-ray Pendellösung Oscillations
- Determination of Band-filling Change in the Two-dimensional Organic Conductor, τ-(EDO-S, S-DMEDT-TTF)_2(AuBr_2)_, (y≤0.875) by the Quantum Oscillation of Magnetoresistance(Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Pr