Evidence of Correlation between Dark Spots and Dislocations Originating from Substrate in Light-Emitting Diodes
スポンサーリンク
概要
- 論文の詳細を見る
Light-emitting diodes were fabricated with 150-μm-diameter emitting windows. Multi-epitaxial layers were grown by the metalorganic chemical vapor deposition method. The diodes contained a GaAs active layer and a distributed Bragg reflector. Multiple defects were observed on the surfaces of the epitaxial layers. The distributions of the defects were compared with the dislocation distributions of the substrates revealed by the conventional etching method. Since the distributions of both were similar, the defects are considered to be due to dislocations that are present in the substrates. The dislocations threaded through the distributed Bragg reflector and the epitaxial layers during growth. After operation for 2 h with forward currents of 100 mA, dark spots appeared at the positions where the defects were observed. Therefore, it is concluded that the dislocations act as non-radiative centers causing dark spots and device degradation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-02-15
著者
-
SAKA Takashi
Department of Electrical and Electronic Engineering, Daido Institute of Technology
-
Hobo Kenji
Research And Development Lab. Daido Steel Co. Ltd.
-
Sone Hidetoshi
Research And Development Lab. Daido Steel Co. Ltd.
-
Hirotani Masumi
Research And Development Lab. Daido Steel Co. Ltd.
-
Kato Toshihiro
Research and Development Lab., Daido Steel Co., Ltd., 2-30 Daido-cho, Minami, Nagoya 457-8545, Japan
-
Kato Toshihiro
Research & Development Laboratory, Daido Steel Co., Ltd., 2-30 Daido-cho, Minami-ku, Nagoya 457-8545, Japan
-
Sone Hidetoshi
Research and Development Lab., Daido Steel Co., Ltd., 2-30 Daido-cho, Minami, Nagoya 457-8545, Japan
-
Saka Takashi
Department of Electrical Engineering and Electronics, Daido Institute of Technology, 10-3 Takiharu-cho, Minami, Nagoya 457-8530, Japan
-
Saka Takashi
Department of Applied Electronics, Daido Institute of Technology, 2-21 Daido-cho, Minami-ku, Nagoya 457-8531, Japan
-
Hirotani Masumi
Research and Development Lab., Daido Steel Co., Ltd., 2-30 Daido-cho, Minami, Nagoya 457-8545, Japan
-
SAKA Takashi
Department of Applied Electronics, Daido Institute of Technology
関連論文
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : II. Strain in GaAsP Layer
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : I. Mosaic Structure
- Evidence of Correlation between Dark Spots and Dislocations Originating from Substrate in Light-Emitting Diodes
- High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source
- Spin Relaxation of Electrons in Graded Doping Strained GaAs-Layer Photocathode of Polarized Electron Source
- Spin Dependent Luminescence of GaAs Thin Layers under Tensile Strain and Compressive Strain Induced by Interface ess
- Correlation between the Relative Sensitivity Factors and the Sputtering Yields in Glow-Discharge Mass Spectrometry
- Quantitative Analysis of Strain in Silicon Crystals Using X-ray Pendellosung Oscillations
- Development of Highly Reliable Point Source Infrared Light-Emitting Diodes and Analysis Using a New Parameter of Dark Area Ratio
- High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction: II. Strain in GaAsP Layer
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction: I. Mosaic Structure
- Evidence of Correlation between Dark Spots and Dislocations Originating from Substrate in Light-Emitting Diodes
- Quantitative Analysis of Strain in Silicon Crystals Using X-ray Pendellösung Oscillations