Evidence of Correlation between Dark Spots and Dislocations Originating from Substrate in Light-Emitting Diodes

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Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : II. Strain in GaAsP Layer
Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : I. Mosaic Structure
Evidence of Correlation between Dark Spots and Dislocations Originating from Substrate in Light-Emitting Diodes
High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source
Spin Relaxation of Electrons in Graded Doping Strained GaAs-Layer Photocathode of Polarized Electron Source
Spin Dependent Luminescence of GaAs Thin Layers under Tensile Strain and Compressive Strain Induced by Interface ess
Correlation between the Relative Sensitivity Factors and the Sputtering Yields in Glow-Discharge Mass Spectrometry
Quantitative Analysis of Strain in Silicon Crystals Using X-ray Pendellosung Oscillations
Development of Highly Reliable Point Source Infrared Light-Emitting Diodes and Analysis Using a New Parameter of Dark Area Ratio
High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source
Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction: II. Strain in GaAsP Layer
Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction: I. Mosaic Structure
Evidence of Correlation between Dark Spots and Dislocations Originating from Substrate in Light-Emitting Diodes

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