Quantitative Analysis of Strain in Silicon Crystals Using X-ray Pendellosung Oscillations
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概要
- 論文の詳細を見る
- 2004-02-15
著者
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SAKA Takashi
Department of Electrical and Electronic Engineering, Daido Institute of Technology
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Saka Takashi
Department Of Electrical Engineering And Electronics Daido Institute Of Technology
関連論文
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : II. Strain in GaAsP Layer
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : I. Mosaic Structure
- Evidence of Correlation between Dark Spots and Dislocations Originating from Substrate in Light-Emitting Diodes
- High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source
- Spin Relaxation of Electrons in Graded Doping Strained GaAs-Layer Photocathode of Polarized Electron Source
- Correlation between the Relative Sensitivity Factors and the Sputtering Yields in Glow-Discharge Mass Spectrometry
- Quantitative Analysis of Strain in Silicon Crystals Using X-ray Pendellosung Oscillations
- High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction: II. Strain in GaAsP Layer
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction: I. Mosaic Structure
- Evidence of Correlation between Dark Spots and Dislocations Originating from Substrate in Light-Emitting Diodes