Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction: I. Mosaic Structure
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概要
- 論文の詳細を見る
The crystalline structures of GaAs/GaAsP layers used for spin-polarized electron sources have been investigated by X-ray diffraction. The specimens are composed of a thin GaAs layer (85–310 nm) on a thick GaAsP layer (2 μm) grown on a (001) surface GaAs substrate by metal-organic vapor phase epitaxy. Both the GaAs and the GaAsP layers possess the same mosaic structure. The mosaic is anisotropic and orientated only within the (110) surface.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-02-15
著者
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SAKA Takashi
Department of Electrical and Electronic Engineering, Daido Institute of Technology
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KATO Toshihiro
Optoelectronic Device Development Group, New Business Development Center, Daido Steel Co. Ltd.
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Horinaka Hiromichi
Department Of Electrical Engineering College Of Engineering University Of Osaka Prefecture
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Iseki Maki
Department Of Electrical And Electronic Engineering Daido Institute Of Technology
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Matsuyama Tetsuya
Department Of Physics & Electronics Osaka Prefecture University
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Saka Takashi
Department of Electrical and Electronic Engineering, Daido Institute of Technology, 10-3 Takiharu-cho, Minami-ku, Nagoya 457-8530, Japan
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Saka Takashi
Department of Applied Electronics, Daido Institute of Technology, 2-21 Daido-cho, Minami-ku, Nagoya 457-8531, Japan
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SAKA Takashi
Department of Applied Electronics, Daido Institute of Technology
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