Development of Highly Reliable Point Source Infrared Light-Emitting Diodes and Analysis Using a New Parameter of Dark Area Ratio
スポンサーリンク
概要
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Surface-emitting light-emitting diodes with a small opening, 150 μm in diameter, having an InGaAs–AlGaAs multi-quantum-well active layer were grown by metal-organic chemical vapor deposition. Their emission wavelength was approximately 850 nm. The manner of their degradation was investigated by operating the diodes for 10,000 h at room temperature, and high reliability was realized. By measuring the dark area and comparing it with output power, we show that the degradation mechanism differs from that of light-emitting diodes with a single GaAs layer. In light-emitting diodes with InGaAs–AlGaAs multi-quantum wells, the p–n junction functions well, despite initial degradation, and further degradation is suppressed.
- 2009-10-25
著者
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Hobo Kenji
Research And Development Lab. Daido Steel Co. Ltd.
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Sone Hidetoshi
Research And Development Lab. Daido Steel Co. Ltd.
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Hirotani Masumi
Research And Development Lab. Daido Steel Co. Ltd.
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Kato Toshihiro
Research and Development Laboratory, Daido Steel Co., Ltd., 2-30 Daido-cho, Minami, Nagoya 457-8545, Japan
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Kato Toshihiro
Research & Development Laboratory, Daido Steel Co., Ltd., 2-30 Daido-cho, Minami-ku, Nagoya 457-8545, Japan
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Sone Hidetoshi
Research and Development Laboratory, Daido Steel Co., Ltd., 2-30 Daido-cho, Minami, Nagoya 457-8545, Japan
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Saka Takashi
Department of Electrical and Electronic Engineering, School of Engineering, Daido University, 10-3 Takiharu-cho, Minami, Nagoya 457-8530, Japan
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Saka Takashi
Department of Applied Electronics, Daido Institute of Technology, 2-21 Daido-cho, Minami-ku, Nagoya 457-8531, Japan
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Hirotani Masumi
Research and Development Laboratory, Daido Steel Co., Ltd., 2-30 Daido-cho, Minami, Nagoya 457-8545, Japan
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Aikawa Moritaka
Research and Development Laboratory, Daido Steel Co., Ltd., 2-30 Daido-cho, Minami, Nagoya 457-8545, Japan
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Harada Haruyuki
Department of Electrical and Electronic Engineering, School of Engineering, Daido University, 10-3 Takiharu-cho, Minami, Nagoya 457-8530, Japan
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SAKA Takashi
Department of Applied Electronics, Daido Institute of Technology
関連論文
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