Quantitative Analysis of Strain in Silicon Crystals Using X-ray Pendellösung Oscillations

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概要

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• A practical quantitative analysis technique for long-range strain in silicon crystals observable by rotating specimen along the scattering vector in X-ray diffraction is proposed. Strain gradients cause the shrinkage of the period of Pendellösung oscillations. From the period of the oscillations, strains are estimated without any reference specimens.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2004-02-15

著者

• Saka Takashi

  Department of Applied Electronics, Daido Institute of Technology, 2-21 Daido-cho, Minami-ku, Nagoya 457-8531, Japan

• Saka Takashi

  Department of Electrical Engineering and Electronics, Daido Institute of Technology, Nagoya 457-8530, Japan

• SAKA Takashi

  Department of Applied Electronics, Daido Institute of Technology

関連論文

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• Correlation between the Relative Sensitivity Factors and the Sputtering Yields in Glow-Discharge Mass Spectrometry
• Development of Highly Reliable Point Source Infrared Light-Emitting Diodes and Analysis Using a New Parameter of Dark Area Ratio
• High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source
• Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction: II. Strain in GaAsP Layer
• Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction: I. Mosaic Structure
• Evidence of Correlation between Dark Spots and Dislocations Originating from Substrate in Light-Emitting Diodes
• Quantitative Analysis of Strain in Silicon Crystals Using X-ray Pendellösung Oscillations

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