Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction: II. Strain in GaAsP Layer

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Following our previous paper, the crystalline structure of GaAs/GaAsP layers, used for spin-polarized electron sources, was investigated by X-ray diffraction. From the observation of reciprocal maps of the {113} reflections under the condition of a small glancing angle with a narrow receiving slit, the strain remaining in the GaAsP layer was revealed. The strain remained only along the [$\bar{1}10$] direction; however, strain in a long range was almost released along the [$\bar{1}\bar{1}0$] direction. It was also shown that the specimen was divided into four large blocks, with their boundaries being parallel to the [$\bar{1}\bar{1}0$] and [$\bar{1}10$] directions. At the boundary parallel to the [$\bar{1}\bar{1}0$] direction, the {113} lattice plane was distorted.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-02-15