Mobility of Charge Carriers in Regioregular Poly(3-hexylthiophene) Induced by Field-Effect Transistor with Al2O3 as Gate Insulator
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概要
- 論文の詳細を見る
We fabricated a field-effect transistor with Al2O3 as a gate insulator to investigate charge carriers in regioregular poly(3-hexylthiophene). The Al2O3 film employed has a specific dielectric constant of 7 and a breakdown voltage of 10 MV/cm. The channel characteristics at the highest gate voltage of -160 V indicate an induced carrier density of $10^{13}$ cm-2 order with a mobility of $8.3\times 10^{-3}$ cm2/Vs. By cooling to 80 K, the mobility decreased by two orders of magnitude with a thermally activated temperature dependence.
- 2004-01-15
著者
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Kuroda Shin-ichi
Department Of Applied Physics Nagoya University
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UKAI Sota
Department of Applied Physics, Nagoya University
-
Ito Hiroshi
Department Neurosurgery Tokyo Medical College
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Kuroda Shin-ichi
Department of Applied Physics, Nagoya University, Chikusa, Nagoya 464-8603, Japan
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Ukai Sota
Department of Applied Physics, Nagoya University, Chikusa, Nagoya 464-8603, Japan
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