Electron Spin Resonance Study of Interface Trap States and Charge Carrier Concentration in Rubrene Single-Crystal Field-Effect Transistors
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概要
- 論文の詳細を見る
- 2011-08-25
著者
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Tsuji Masaki
Institute For Chemical Research Kyoto University
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Tabata H
Department Of Bioengineering School Of Engineering University Of Tokyo
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Kuroda Shin-ichi
Department Of Applied Physics Nagoya University
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TANAKA Hisaaki
Department of Applied Physics, Graduate School of Engineering, Nagoya University
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Takenobu Taishi
Presto Japan Science And Technology Agency (jst)
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ARAI Norimichi
Institute of Materials Science, University of Tsukuba
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MARUMOTO Kazuhiro
Institute of Materials Science, University of Tsukuba
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TAKEYA Jun
PRESTO, Japan Science and Technology Agency (JST)
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SHIMOI Yukihiro
Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technolog
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IWASA Yoshihiro
Quantum-Phase Electronics Center, University of Tokyo
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Arai Norimichi
Institute Of Materials Science University Of Tsukuba
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