Electron Spin Resonance Observation of Gate-Induced Ambipolar Charge Carriers in Organic Devices
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概要
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Electron spin resonance (ESR) measurements are performed on gate-induced ambipolar charge carriers in composites of regioregular poly(3-hexylthiophne) (RR-P3HT) and C60 using metal–insulator–semiconductor (MIS) diode structures with the RR-P3HT–C60 composite as the active semiconductor and Al2O3 as the gate insulator. Clear ESR signals of $g \approx 2.002$ and $g \approx 1.998$ are successfully observed for negative and positive gate voltages ($V_{\text{G}}$), respectively, and they monotonically increase as $|V_{\text{G}}|$ increases in each accumulation mode. We demonstrate microscopically that positive and negative charge carriers with the signals $g \approx 2.002$ and $g \approx 1.998$ are ascribable to RR-P3HT and C60, respectively.
- 2007-12-25
著者
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Kuroda Shin-ichi
Department Of Applied Physics Nagoya University
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Marumoto Kazuhiro
Department Of Applied Physics Nagoya University
-
Ito Hiroshi
Department Neurosurgery Tokyo Medical College
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Watanabe Shun-ichiro
Department Of Applied Physics Nagoya University
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Sakamoto Tomotaka
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
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Watanabe Shun-ichiro
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
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