Arai Norimichi | Institute Of Materials Science University Of Tsukuba

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概要

• 同名の論文著者
• Institute Of Materials Science University Of Tsukubaの論文著者

関連著者

• Arai Norimichi

  Institute Of Materials Science University Of Tsukuba

• Tsuji Masaki

  Institute For Chemical Research Kyoto University

• Kuroda Shin-ichi

  Department Of Applied Physics Nagoya University

• Takenobu Taishi

  Presto Japan Science And Technology Agency (jst)

• TAKEYA Jun

  PRESTO, Japan Science and Technology Agency (JST)

• Tabata H

  Department Of Bioengineering School Of Engineering University Of Tokyo

• TANAKA Hisaaki

  Department of Applied Physics, Graduate School of Engineering, Nagoya University

• ARAI Norimichi

  Institute of Materials Science, University of Tsukuba

• MARUMOTO Kazuhiro

  Institute of Materials Science, University of Tsukuba

• SHIMOI Yukihiro

  Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technolog

• IWASA Yoshihiro

  Quantum-Phase Electronics Center, University of Tokyo

• Marumoto Kazuhiro

  Institute Of Materials Science University Of Tsukuba

• Tanaka Hisaaki

  Department Of Applied Physics Nagoya University

• Shimoi Yukihiro

  Nanosystem Research Institute (nri) National Institute Of Advanced Industrial Science And Technology (aist)

• Iwasa Yoshihiro

  Quantum-Phase Electronics Center, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Iwasa Yoshihiro

  Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Arai Norimichi

  Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Takeya Jun

  PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 322-0012, Japan

• Takenobu Taishi

  PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 322-0012, Japan

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著作論文

• Electron Spin Resonance Study of Interface Trap States and Charge Carrier Concentration in Rubrene Single-Crystal Field-Effect Transistors
• Electron spin resonance study of interface trap states and charge carrier concentration in rubrene single-crystal field-effect transistors
• Electron Spin Resonance Study of Interface Trap States and Charge Carrier Concentration in Rubrene Single-Crystal Field-Effect Transistors

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