Iwasa Yoshihiro | Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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概要
- Iwasa Yoshihiroの詳細を見る
- 同名の論文著者
- Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japanの論文著者
関連著者
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Iwasa Yoshihiro
Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Kasahara Yuichi
Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Tsuji Masaki
Institute For Chemical Research Kyoto University
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Oguchi Tamio
Department Of Engineering Physics The University Of Electro-communications
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Kuroda Shin-ichi
Department Of Applied Physics Nagoya University
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TAKANO Takumi
Japan Synchrotron Radiation Research Institute (JASRI/SPring-8)
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Takenobu Taishi
Presto Japan Science And Technology Agency (jst)
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TAKEYA Jun
PRESTO, Japan Science and Technology Agency (JST)
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Arai Norimichi
Institute Of Materials Science University Of Tsukuba
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Takenobu Taishi
Department Of Applied Physics Graduate School Of Advanced Science And Engineering Waseda University
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Marumoto Kazuhiro
Institute Of Materials Science University Of Tsukuba
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Tanaka Hisaaki
Department Of Applied Physics Nagoya University
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Shimoi Yukihiro
Nanosystem Research Institute (nri) National Institute Of Advanced Industrial Science And Technology (aist)
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Shimotani Hidekazu
Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Yuan Hongtao
Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Iwasa Yoshihiro
Quantum-Phase Electronics Center, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Iwasa Yoshihiro
Quantum-Phase Electronics Center, School of Engineering, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Arai Norimichi
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Sato Tatsuya
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Nishijima Takahiro
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Takeuchi Yuki
Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Ye Jianting
Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Kasahara Yuichi
Quantum-Phase Electronics Center, School of Engineering, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Hase Izumi
Condensed-Matter Physics Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Taguchi Yasujiro
Cross-correlated Materials Research Group (CMRG), RIKEN Advanced Science Institute (ASI), Wako, Saitama 351-0198, Japan
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Hase Izumi
Condensed-Matter Physics Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568
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Taguchi Yasujiro
Cross-Correlated Materials Research Group (CMRG), ASI, RIKEN, Wako, Saitama 351-0198
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Takeya Jun
PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 322-0012, Japan
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Takenobu Taishi
PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 322-0012, Japan
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Oguchi Tamio
Department of Quantum Matter, ADSM, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Takano Takumi
Japan Synchrotron Radiation Research Institute (JASRI/SPring-8), Sayo, Hyogo 679-5198, Japan
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Marumoto Kazuhiro
Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Tsuji Masaki
Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yomogida Yohei
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
著作論文
- Electron Spin Resonance Study of Interface Trap States and Charge Carrier Concentration in Rubrene Single-Crystal Field-Effect Transistors
- Doping Variation of Optical Properties in ZrNCl Superconductors
- Electric-Field-Induced Superconductivity Detected by Magnetization Measurements of an Electric-Double-Layer Capacitor
- Microscopic Characterization of Printable Low-Voltage Electrolyte-Gated Transistors by Electron Spin Resonance (Special Issue : Printed Electronics)