Electronic Structures of Bi4-xLaxTi3O12 and Bi4ZrxTi3-xO12 Single Crystals Studied by Soft-X-Ray Spectroscopy
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概要
- 論文の詳細を見る
The electronic structures of La-doped Bi4Ti3O12 (Bi4-xLaxTi3O12) and Zr-doped Bi4Ti3O12 (Bi4ZrxTi3-xO12) single crystals have been studied by X-ray absorption spectroscopy (XAS) and soft-X-ray emission spectroscopy (SXES). In both Bi4-xLaxTi3O12 and Bi4Ti3-xZrxO12, the Ti $3d$ and O $2p$ partial densities of states (PDOS) in the valence band region were observed in O $1s$ and Ti $2p$ SXES spectra. The energy position of the Ti $3d$ state overlapped with that of the O $2p$ state, indicating the occurrence of the hybridization effect between the Ti $3d$ and O $2p$ states. The hybridization effect of Bi4-xLaxTi3O12 increases with increasing La dopant concentration, although that of Bi4Ti3-xZrxO12 does not depends on Zr dopant concentration. This finding indicates that the hybridization effect is closely related to the change in the bond length between Ti and O ions.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
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Noguchi Yuji
Institute Of Industrial Science University Of Tokyo
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Miyayama Masaru
Institute Of Industrial Science The University Of Tokyo
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Tsukamoto Takeyo
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Shin Shik
Institute For Solid State Physics (issp) University Of Tokyo
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Higuchi Tohru
Department Of Applied Physics Faculty Of Science Tokyo Univ. Of Science
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Moriuchi Yoshiyuki
Department of Applied Physics, Tokyo University of Science, Tokyo 162-8601, Japan
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Higuchi Tohru
Department of Applied Physics, Tokyo University of Science, Tokyo 162-8601, Japan
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Noguchi Yuji
Institute of Industrial Science, University of Tokyo, Tokyo 153-8505, Japan
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