Effect of Thermal Treatment of Undoped Bi4Ti3O12 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
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概要
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We have prepared undoped-Bi4Ti3O12 (BIT) thin films on (111) Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using Bi(CH3)3 and Ti($i$-OC3H7)4 sources. The structural properties of the BIT thin films deposited at 500°C depend on the total gas flow rate of Ar and O2 gases during the deposition. The electrical and structural properties of the as-deposited BIT thin films are improved by postannealing at 800°C in O2 atmosphere. When the total gas flow rate was 90 sccm, the post-annealed BIT thin films exhibited a (117)-preferred orientation and a good $P$–$E$ histeresis loop. Their remanent polarization ($P_{\text{r}}$) and the coercive field ($E_{\text{c}}$) were $2P_{\text{r}}=28.8$ μC/cm2 and $2E_{\text{c}}=130.7$ kV/cm, respectively.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
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Tsukamoto Takeyo
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
-
Higuchi Tohru
Department Of Applied Physics Faculty Of Science Tokyo Univ. Of Science
-
Nakamura Makoto
Department Of Applied Chemistry Faculty Of Systems Engineering Wakayama University
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Higuchi Tohru
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
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