Preparation of Ferroelectric Bi_4Ti_3O_<12> Thin Films with c-Axis Orientation by Atmospheric-Pressure Metal-Organic Chermical Vapor Deposition
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概要
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Ferroelectric Bi_4Ti_3O_<12> thin films were prepared by the metal-organic chemical vapor deposition (MOCVD) method at atmospheric pressure using Bi(o-C_7H_7)_3 and Ti(i-OC_3H_7)_2(DPM)_2 as metalorganic sources. Assist Ar gas flow rate effects on the growth of the thin films were also examined. Thin films obtained were characterized by XRD analysis, SEM, AFM and D-E hysteresis loop observations. Most of the single-phase Bi_4Ti_3O_<12> thin films with c-axis orientation were deposited on Pt/Ti/SiO_2/Si and Pt substrates above 500℃. Completely c-axis-oriented Bi_4Ti_3O_<12> thin films were prepared on Pt plates at 600℃, which showed good ferroelectric properties: remanent polarization of 1.0 μC/cm^2, coercive field of 18 kV/cm and leakage current on the order of 10^<-9> A/cm^2.
- 社団法人応用物理学会の論文
- 1995-05-15
著者
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TSUKAMOTO Takeyo
Department of Applied Physics, Tokyo University of Science
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Tsukamoto Takeyo
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Tsukamoto Takeyo
Department Of Applied Physics Science University Of Tokyo
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Okamura S
Department Of Applied Physics Science University Of Tokyo
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Ishinabe Minoru
Department of Applied Physics, Science University of Tokyo
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Okamura Socihiro
Department Of Applied Physics Science University Of Tokyo
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Yoshimura Kuniaki
Department of Applied Physics, Science University of Tokyo
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Yoshimura Kuniaki
Department Of Applied Physics Science University Of Tokyo
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Ishinabe Minoru
Department Of Applied Physics Science University Of Tokyo
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