Preparation and Characterization of $a$- and $b$-Axes-Oriented Bi4Ti3O12 Thin Films Using TiO2 Anataze Buffer Layer
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概要
- 論文の詳細を見る
Bi4Ti3O12 (BIT) thin films with TiO2 anataze buffer layer were deposited on the Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using Bi(CH3)3 and Ti($i$-OC3H7)4 sources. When the substrate temperature was fixed at 500°C, the as-deposited BIT thin film exhibited highly $a$- and $b$-axes-oriented BIT single phase. The interface between the BIT thin film and the substrate was very smooth. The as-deposited BIT thin film consisted of small grain and exhibited a good $P$–$E$ hysteresis loop. Subsequently, the remanent polarization ($P_{\text{r}}$) of the as-deposited BIT thin film with film thickness of 400 nm was $2P_{\text{r}}=44.4$ μC/cm2.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Tsukamoto Takeyo
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Hachisu Yuji
Department Of Applied Physics Tokyo University Of Science
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Higuchi Tohru
Department Of Applied Physics Faculty Of Science Tokyo Univ. Of Science
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Nakamura Makoto
Department Of Applied Chemistry Faculty Of Systems Engineering Wakayama University
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Higuchi Tohru
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Tsukamoto Takeyo
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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