Electronic Structure in the Band-Gap Region of Protonic Conductor SrZr0.90Y0.10O3-δ
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概要
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The electronic structure in the band-gap region of protonic conductor SrZr0.90Y0.10O3-δ was studied by soft-X-ray absorption spectroscopy (XAS). The O $1s$ XAS spectrum of air-annealed SrZr0.90Y0.10O3-δ exhibits three distinct features, namely, the holes on top of the valence band, acceptor-induced level just above the Fermi level and Zr $4d$ defect-induced level at the bottom of the conduction band, which are lower in the O $1s$ XAS spectrum of wet-annealed SrZr0.90Y0.10O3-δ. These findings directly indicate that the doped hydrogen compensates the presence of the holes.
- 2004-08-15
著者
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Mizusaki Junichiro
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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KAWADA Tatsuya
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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Tsukamoto Takeyo
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Matsumoto Hiroshige
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Shin Shik
Institute For Solid State Physics (issp) University Of Tokyo
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Yashiro Keiji
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Higuchi Tohru
Department Of Applied Physics Faculty Of Science Tokyo Univ. Of Science
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Shimura Tetsuo
Center For Integrated Research In Science And Engineering Nagoya University
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Yashiro Keiji
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
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