Effects of V-Doping on Mixed Conduction Properties of Bismuth Titanate Single Crystals

概要

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Electrical conduction behaviors of bismuth titanate (BiT) and vanadium-doped bismuth titanate (V-BiT) single crystals were investigated by the complex impedance method at high temperatures. Oxygen partial pressure dependence of the electrical conductivity revealed that both BiT and V-BiT showed oxide ionic and $p$-type mixed conduction properties. In both BiT and V-BiT, ionic conductivity was larger than hole conductivity along the $a(b)$-axis, while hole conductivity was much larger than ionic conductivity along the $c$-axis. Vanadium doping largely decreased the ionic and hole conductivities along the $a(b)$-axis. In contrast, the ionic and hole conductivities of V-BiT along the $c$-axis were almost the same as those of BiT. It was suggested that bismuth and oxygen vacancies preferentially exist in the pseudo-perovskite blocks in BiT, and vanadium substitution effectively decreases the concentration of oxygen vacancies and holes in the pseudo-perovskite blocks.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-09-15