Effects of Synchrotron Radiation Spectrum Energy on Polymethyl Methacrylate Photosensitivity to Deep X-ray Lithography
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概要
- 論文の詳細を見る
Since X-ray lithography requires a high photon flux to achieve deep resist exposure, a synchrotron radiation beam, which is not monochromatized, is generally used as a light source. If the synchrotron radiation beam is monochromatized, photon flux will decrease rapidly. Because of this reason, the wavelength dependence of the resist sensitivity has not been investigated for deep X-ray lithography. Measuring the spectrum of a white beam with a Si solid-state detector (SSD) is difficult because a white beam has a high intensity and an SSD has a high sensitivity. We were able to measure the spectrum and the photocurrent of a white beam from a beam line used for deep X-ray lithography by keeping the ring current below 0.05 mA. We evaluated the characteristics of the output beam based on the measured spectrum and photocurrent, and used them to investigate the relationship between the total exposure energy and the dose-processing depth with polymethyl methacrylate (PMMA). We found that it is possible to guess the processing depth of PMMA from the total exposure energy in deep X-ray lithography.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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Mekaru Harutaka
Laboratory Of Advanced Science And Technology For Industry Himeji Institute Of Technology
-
Hattori Tadashi
Laboratory Of Advanced Science And Technology For Industry
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Utsumi Yuichi
Laboratory Of Advanced Science And Technology For Industry
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Mekaru Harutaka
Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology, 3-1-2 Koto, Kamigori, Ako, Hyogo 678-1205, Japan
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HATTORI Tadashi
Laboratory of Advanced Science & Technology for Industry, University of Hyogo
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