Electrical Properties of Indium Oxide Films in the Presence of Hydrogen and Ethanol Gasses
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概要
- 論文の詳細を見る
Metal oxide semiconductors with several degrees of crystalline perfection were prepared to evaluate their sensitivity to hydrogen and ethanol gasses. Highly oriented In2O3 polycrystalline films were formed at substrate temperatures of (a) 350°C, (b) 450°C and (c) 550°C on fused quartz substrates. Samples (a), (c) and (b) are in the order of small crystallite size observed in the polycrystalline film. The resistivity of samples (a) and (c) varied with hydrogen and ethanol concentrations indicating a higher sensitivity than sample (b). The degree of crystalline perfection of the film might affect the gas sensitive resistivity
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-05-15
著者
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Saitoh Hidetoshi
Department Of Bioresource Science Obihiro University Of Agriculture And Veterinary Medicine
-
Kamata Kiichiro
Department Of Chemistry Nagaoka University Of Technolgy
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Ohshio Shigeo
Department Of Chemistry Nagaoka University Of Technology
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Nishino Junichi
Department Of Chemistry Nagaoka University Of Technolgy
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Zhang Ming
Department Of Anatomy And Structural Biology University Of Otago
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Takayama Kouichi
Department Of Chemistry Nagaoka University Of Technology
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