Heteroepitaxy of In2O3 Whiskers Fabricated on Single Crystalline (001) Yittrium Stabilized Zirconia
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概要
- 論文の詳細を見る
A chemical-vapor-deposition method operated under atmospheric pressure is available for crystal growth showing morphological instabilities. A highly supersaturating condition that is favorable for the growth of elegant ZnO whiskers promotes the growth of In2O3 whiskers. The In2O3 whiskers grew perpendicularly to the single crystalline substrate of yttria stabilized zirconia (YSZ). The heteroepitaxial relationship between the whiskers and the YSZ substrate is determined as In2O3[100](001) $\parallel$ YSZ[100](001). The full-width at half maximum value of the (400) reflection of the In2O3 whisker was also determined to be 0.23° on the rocking curve.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-05-15
著者
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Saitoh Hidetoshi
Department Of Bioresource Science Obihiro University Of Agriculture And Veterinary Medicine
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Ohshio Shigeo
Department Of Chemistry Nagaoka University Of Technology
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Sugata Hironori
Department Of Chemistry Nagaoka University Of Technology
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Sugata Hironori
Department of Chemistry, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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