Synthesis of HfO2 Whiskers by Chemical Vapor Deposition Technique Operated under Atmospheric Pressure

概要

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Hafnium oxide (HfO2) whiskers were successfully synthesized using a chemical-vapor-deposition technique operated under atmospheric pressure. The whiskers were deposited on a silicon substrate under the substrate temperature in the range from 650°C to 700°C for 120 min. The X-ray diffraction pattern reveals that the whiskers have a preferred orientation along the $\langle 200\rangle$ direction and the presence of the monoclinic structure. The morphology of the HfO2 whiskers indicates that the whisker growth rate increases with the temperature while the whisker density decreases. The HfO2 whiskers were obtained with average growth rates of 0.3 nms-1, 0.6 nms-1 and 0.8 nms-1 corresponding to the substrate temperatures of 650°C, 680°C and 700°C, respectively. Excess temperatures introduce the morphological instability of the whisker, such as the dendrite growth. Furthermore, a relatively intense cathodoluminescence emission was observed in the UV regions at room temperature.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-08-15