Dielectric Properties of Ba(Ti0.85Zr0.15)O3 Film Prepared by Metalorganic Chemical Vapor Deposition

概要

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Ba(Ti0.85Zr0.15)O3 films were prepared at 973 K on (100)Pt/(100)MgO substrates by metalorganic chemical vapor deposition (MOCVD), and their dielectric properties were investigated. The dielectric constant ($\varepsilon'$) of the film changed depending on the ac electric field ($E_{\text{ac}}$) and frequency at temperatures below 400 K. The $\varepsilon'$ showed a broad maximum at a specific temperature ($T_{\text{M}}$) that decreased from 370 to 330 K with increasing $E_{\text{ac}}$ from $0.15\times 10^{5}$ to $15\times 10^{5}$ V$\cdot$m-1. The film exhibited ferroelectric characteristics with remanent polarization ($2P_{\text{r}}$) of $3\times 10^{-2}$ C$\cdot$m-2 and coercive field ($2E_{\text{C}}$) of $14\times 10^{5}$ V$\cdot$m-1.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-11-15