D.C. Polarization of Defect-Perovskite LaTa3O9 (高機能セラミック・デバイス<特集>)
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概要
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The electrical conduction mechanism for defect-perovskite LaTa<SUB>3</SUB>O<SUB>9</SUB> was studied by D.C. polarization technique. The linear log (σ<SUB>dc</SUB>) vs (time)<SUP>-1/2</SUP> relationship was observed, which means that diffusion process could be dominant for the electrical conduction. Total stored charges increased with increasing temperature depending on oxygen partial pressure (P<SUB>O2</SUB>). Asymmetrical polarization measurements showed that the polarity of the electrode affected to the time dependence of σ<SUB>dc</SUB> and leakage currents. The relationship between D.C. voltage and the leakage currents suggested that dominant electronic charges might change from electrons to holes with increasing temperature and P<SUB>O2</SUB>.
- 社団法人 粉体粉末冶金協会の論文
著者
-
Goto Takashi
Institute For Material Research Tohoku University
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West A.R.
University of Aberdeen, Meston Walk, Aberdeen AB92UE, Scotland, U.K.
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