Highly Stable a-Si:H Films Deposited by Using Multi-Hollow Plasma Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Hydrogenated amorphous silicon (a-Si:H) films of high stability against light exposure have been deposited by using a newly developed multi-hollow plasma chemical vapor deposition (CVD) method. Films deposited in the upstream region in the multi-hollow plasma CVD reactor are a-Si:H films without incorporating a-Si:H nano-particles (clusters), while those in the downstream region are a-Si:H films with incorporating clusters. A-Si:H films without clusters have a low initial defect density of $5 \times 10^{15}$ cm-3 and keep the value even after 100 h exposure of intense light intensity of 240 mW/cm2, whereas a-Si:H films with clusters show a significant increase in defect density from its initial value of $5 \times 10^{15}$ cm-3 to $2 \times 10^{16}$ cm-3 after 100 h light exposure. These results indicate that suppression of clusters incorporated into films is the key to realizing highly stable a-Si:H films.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-11-10
著者
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Shiratani Masaharu
Department Of Electoronics Kyushu University
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Koga Kazunori
Department Of Advanced Energy Engineering Sciences Interdisciplinary Graduate School Of Engineering
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Inoue Toshihisa
Department Of Cardiology Chiba Cardiovascular Center
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Watanabe Yukio
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Bando Kouki
Department Of Electoronics Kyushu University
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Iwashita Shinya
Department Of Electoronics Kyushu University
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Koga Kazunori
Department of Electoronics, Kyushu University, Hakozaki, Fukuoka 812-8581, Japan
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Inoue Toshihisa
Department of Electoronics, Kyushu University, Hakozaki, Fukuoka 812-8581, Japan
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Iwashita Shinya
Department of Electoronics, Kyushu University, Hakozaki, Fukuoka 812-8581, Japan
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