Defect chemistry of barium monoferrite, BaFe2O4-.DELTA..
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概要
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In order to obtain information on the defects in ternary oxide systems, the nonstoichiometry and electrical conductivity of BaFe<SUB>2</SUB>O<SUB>4</SUB> were determined at temperatures between 1050 and 1125 °C. The electrical conductivity was found to be proportional to <I>P</I><SUB>O<SUB>2</SUB></SUB><SUP>−1⁄6</SUP>. This relationship suggests that BaFe<SUB>2</SUB>O<SUB>4</SUB> is an oxygen deficient n-type semiconductor at high temperatures. The nonstoichiometry was proportional to <I>P</I><SUB>O<SUB>2</SUB></SUB><SUP>−1⁄2.88</SUP>. order to interpret the dependence of electrical conductivity and nonstoichiometry on the oxygen partial pressure, various defect models were examined. As a result the following equilibria were selected from among the oxygen vacancies V<SUB>0</SUB><SUP>··</SUP> and V<SUB>0</SUB><SUP>x</SUP>, and oxygen gas.<BR>null=(1⁄2)O<SUB>2</SUB>+V<SUB>0</SUB><SUP>x</SUP><BR>V<SUB>0</SUB><SUP>x</SUP>=V<SUB>0</SUB><SUP>··</SUP>+2<I>e</I>′<BR>An analysis based on the above defect model explains the data well.
- 公益社団法人 日本化学会の論文
著者
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Fueki Kazuo
Department Of Industrial Chemisrty Faculty Of Science And Technology Science University Of Tokyo
-
Nakamura Akio
Department Of Information And Computer Sciences Saitama University
-
Mukaibo Takashi
Department of Applied Chemistry Faculty of Engineering The University of Tokyo
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Yamauchi Shigeru
Department of Chemistry, Faculty of Science, The University of Tokyo
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