マグネトロン反応性スパッタリングによる炭化シリコン膜の組成と表面状態

概要

論文の詳細を見る
Silicon carbide films are deposited on glassy carbon substrates at 1000 °C, by magnetron reactive sputtering in argon-acetylene atmospher of 2.0×10-3 Torr and at rf power density of 5 W/cm2. Acetylene partial pressure PC2H2 is varied in the range 0-3.0×10-4 Torr. Effects of PC2H2 on the composition and morphology of films are examined by Rutherford backscattering of 1.8 MeV He+ ions and by scanning electron microscopy, respectively. The composition of the films varies in a wide range with.PC2H2 and becomes stoichiometric at PC2H2 = 2.5×10-4 Torr. Carbon segregation is slightly observed on the surface of films prepared at PC2H2 lower than 2.0×10-4 Torr and a trace of impurity argon is uniformly contained over the whole depth of the films obtained at PC2H2 higher than that value. The glanular texture is observed on the surface of the films prepared at lower PC2H2 but its growth decreases with increasing PC2H2.
日本真空協会の論文