低圧プラズマCVDによる窒化シリコンコーティング膜

概要

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Silicon nitride films (SiN films) were prepared by low pressure grow discharges of silane nitrogen mixtures in a capacitively coupled plasma CVD apparatus. The substrate was placed on the cathode of the apparatus. The process of film formation and film characteristics depending upon the effect of the experimental parameters, such as silane gas flow rate, cathode bias voltage and gas pressure, were investigated. In the case of the cathode bias voltage higher than 700 V, SiN films are not formed at the silane gas flow rate lower than the critical one. Atomic concentration ratio Nsi/NN varies extensively by changing the cathode bias voltage and the flow rate of silane gas. SiN films in which atomic concentration ratio is close to 0.75 are transparent. The surface of the films deposited on polished silicon wafers is flat, fine and bright. The experimental results show that ion bombardment at the stage of film formation considerably affects the process of film formation and the characteristics of the films.
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