Si (111) 7×7面におけるGe薄膜の成長様式と5×5超構造

概要

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The initial stage of heteroepitaxy and the superstructure of the Ge on Si surface have been investigated by LEED and AES. Germanium was evaporated on the clean Si (111) 7×7 surface up to about 6 monolayers in the ultrahigh vacuum chamber. With increase in Ge coverage on the substrate heated at 350°C, the intensity of the Si (LVV) -AES signal decreased in accordance with a growth mode of the Stranski-Krastanov type, i.e., the first 3 monolayers grow as layer by layer followed by a 3-dimensional island formation, and the LEED pattern showed a (5×5) superstructure at about 2 monolayers Ge coverage. The AES intensity and the LEED pattern drastically changed by annealing. The phase diagram of the superstructure of the Ge on Si (111) system was constructed for the coverage in nomolayers of Ge deposited at room temperature versus annealing temperature.
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