シリコン単結晶成長に関する最近の数値シミュレーション技術と熱物性値(<小特集>バルク成長分科会特集-最先端デバイスと科学技術-)

概要

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In single crystal growth of silicon, it is important to acquire correct knowledge about momentum, heat and mass transfers in the crystal growth furnace and then to control them, because the quality of crystals is closely related to the transport phenomena in the furnace. Numerical simulation is one of the methods to understand the phenomena in the furnace, and recently there has been much interest in the calculation of melt convection and global analysis of heat transfer in the furnace. Particularly, since the growth of larger single crystals generates turbulent melt convection, most of the studies focus on accurate modeling of turbulence in the melt to understand the melt convection in the real crystal growth process. Here, the recent studies on numerical simulations of silicon single crystal growth by the Czochralski and floatingzone methods are introduced, and also the values of thermophysical properties used in these numerical studies are investigated. Moreover, being based on the sensitivity analysis of the thermophysical properties by using the global model of the CZ furnace in addition to the survey of properties, the necessity of the standard data for thermophysical properties is discussed.
日本結晶成長学会の論文
2004-01-15