1230 ポーラス構造の導入によるCu配線層間絶縁膜の誘電率と剛性への影響(J10-3 マイクロ・ナノ材料システムの力学と強度・機能評価(2) 力学特性評価,ジョイントセッション,21世紀地球環境革命の機械工学:人・マイクロナノ・エネルギー・環境)

概要

論文の詳細を見る
Porous low-k dielectrics are introduced for low-k dielectrics because of its ultra low-k dielectric constant. However, their poor mechanical strength and high coefficient of thermal expansion can cause cohesive failure of low-k dielectrics or interfacial failure between Cu/low-k dielectrics during thermal cycling or CMP(Chemical Mechanical Polishing) process. Especially, the damascene structure of the Cu interconnect can give rise to complex stress states and this causes a lot of issues during the fabrication process. Therefore, it is important to study the relationships between the porosity and the mechanical properties and, also, the porosity and the dielectric constant. In this paper, we studied the effect of the porosity in low-k dielectric film between copper wirings on the dielectric constant and the stiffness by numerical simulation. The effects of the shape and the porosity of pores in low-k dielectric film on the mechanical properties and the dielectric constant were discussed.
2008-08-02