OS0413 層間絶縁膜の機能特性に及ぼす空孔配置の影響(先端材料システムの力学とメゾスケールモデリング,オーガナイズドセッション)

概要

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Higher performance large scale integration (LSI) requires copper (Cu) instead of aluminum (Al) as a wiring metal because of its superior electrical conductivity. These LSI also requires lower dielectric constant to decrease line-to-line capacitance. Recently, porous low-k dielectrics are introduced for low-k dielectrics because of its ultra lower dielectric constant. However, their poor mechanical strength causes fractures of porous low-k dielectrics during Chemical Mechanical Polishing (CMP) process. Therefore, it is important to keep the mechanical strength of porous low-k dielectrics during increasing porosity. In this paper, we studied the mechanical property and dielectric property of porous low-k dielectrics by finite element method and U^* method. U^* expresses a degree of connection between a loading point and an internal arbitrary point. To estimate dielectric property, we expanded the U^* method to the electrostatic field problem. The effects of pore arrangements on the mechanical property and dielectric property of porous low-k dielectrics were discussed.
一般社団法人日本機械学会の論文
2009-07-24