指標U^*の静電場問題への拡張とポーラス構造を有する層間絶縁膜の構造設計への応用

概要

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Higher performance large scale integration (LSI) requires copper (Cu) instead of aluminum (Al) as a wiring metal because of its superior electrical conductivity. These LSI also requires lower dielectric constant to decrease line-to-line capacitance. Recently, porous low-k dielectrics are introduced for low-k dielectrics because of its ultra lower dielectric constant. However, their poor mechanical strength causes fractures of low-k dielectrics during Chemical Mechanical Polishing (CMP) process. Therefore, it is important to keep the mechanical strength of porous low-k dielectrics during increasing porosity. In this paper, we studied the mechanical strength and dielectric constant of porous low-k dielectrics by finite element method and U^* method. The U^* method expresses a degree of connection between a loading point and an internal arbitrary point. The effects of porosity of porous low-k dielectrics on the mechanical strength and dielectric constant were discussed.
2009-08-25