修正研磨による大口径ウエハの高平坦化(第1報) : ウエハとポリシャ間の圧力分布と接触状態

概要

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CMP is the standard planarization method for silicon wafers. For semiconductors of the next generation, a flatness of less than 0.1μm is required on a 12" wafer. We have developed an oscillation-speed-control-type polishing machine that modifies a wafer's profile accurately. In this polishing, an appropriate polishing theory has to be used for the simulation that calculates a wafer profile. This report shows how the pressure distribution and the contact state change with the overhang of the polishing tool and type of a polisher used. The simulation showed that pressure distribution is linear, contact length is constant for polishing head pressure and polisher elasticity. On the other hand, the experimental results show that pressure distribution is non-linear in the case that the tool-overhang is large and the contact length changes when polisher types are different. It was shown that the characteristic of polisher elasticity has to be taken into account for the polishing simulation.
公益社団法人精密工学会の論文
2008-01-05