Disorder-Driven Quantum Phase Transition from Antiferromagnetic Metal to Insulating State in Multilayered High-T_c Cuprate (Cu, C) Ba_2Ca_4Cu_5O_y(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
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概要
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We report on superconducting (SC) characteristics for the oxygen-reduced Cu-based five-layered high-temperature superconductor (Cu,C)Ba_2Ca_4Cu_5O_y [Cu-1245(OPT)], which includes pyramidal outer planes (OPs) and square inner planes (IPs). As a result of a reduction in the carrier density, the superconductivity for Cu-1245(OPT) occurs at the nearly optimally doped OPs with T_c=98K. The onset of static antiferromagnetic (AFM) order at IPs is evidenced from the observation of zero-field Cu NMR at low temperatures, although the SC transition at OPs emerges below T_c=98K. A disorder, which is actually mapped onto the underdoped IPs, is demonstrated to cause a quantum phase transition from AFM metal to insulating state in an underdoped regime. This finding reinforces that an AFM metallic phase exists between the AFM insulating phase and the SC phase for the ideally flat CuO_2 plane without disorder, as reported for the IPs in optimally doped Hg-1245 with the same doping level as in Cu-1245(OPT).
- 社団法人日本物理学会の論文
- 2006-12-15
著者
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KITO Hijiri
National Institute of Advanced Industrial Science and Technology
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IYO Akira
National Institute of Advanced Industrial Science and Technology
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MUKUDA Hidekazu
Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka Universit
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KITAOKA Yoshio
Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka Universit
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Kito Hijiri
Jst Trip
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Kito Hijiri
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Iyo Akira
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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KODAMA Yasuharu
National Institute of Advanced Industrial Science and Technology (AIST)
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Kito Hijiri
National Institute Of Advanced Industrial Science And Technology (aist)
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Yoh Kohori
Department Of Material Science Faculty Of Science Himeji Institute Of Technology
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Kohori Y
Chiba Univ. Chiba
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Kobayashi Y
Department Of Physics Division Of Material Science Nagoya University
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Iyo A
National Institute Of Advanced Industrial Science And Technology (aist)
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Hidekazu Mukuda
Department Of Materials Engineering Science Graduate School Of Engineering Science Osaka University
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Kitaoka Y.
Graduate School Of Science Osaka University
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Kitaoka Yoshio
Department Of Material Physics Faculty Of Engineering Science Osaka University
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Mukuda Hidekazu
Department Of Materials Engineering Science Osaka University
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Shimizu Sunao
Graduate School Of Engineering Science Osaka University
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TOKIWA Kazuyasu
Department of Applied Electronics, Faculty of Industrial Science and Technology, Tokyo University of
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WATANABE Tsuneo
Department of Applied Electronics, Faculty of Industrial Science and Technology, Tokyo University of
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ABE Machiko
Department of Materials Engineering Science, Osaka University
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SHIMIZU Sunao
Department of Materials Engineering Science, Osaka University
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TANAKA Yasutomo
National Institute of Advanced Industrial Science and Technology (AIST)
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Tanaka Yasutomo
National Institute Of Advanced Industrial Science And Technology
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Mukuda Hidekazu
Department Of Materials Engineering Science Graduate School Of Engineering Science Osaka University
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Kawasaki Y
Department Of Quantum Materials Science University Of Tokushima
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Abe Machiko
Department Of Materials Engineering Science Osaka University
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Kitaoka Y
Osaka Univ. Osaka Jpn
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Tokiwa K
Applied Electronics Faculty Of Industrial Science And Technology Tokyo University Of Science
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Tokiwa Kazuyasu
Department Of Applied Electronics Science University Of Tokyo
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Tokiwa Kazuyasu
Applied Electronics Faculty Of Industrial Science And Technology Tokyo University Of Science
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Watanabe Tsuneo
Applied Electronics Faculty Of Industrial Science And Technology Tokyo University Of Science
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Watanabe Tsuneo
Department Of Applied Electronics Faculty Of Industrial Science And Technology Science University Of
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KITAOKA Yoshio
Department of Materials Engineering Science, Osaka University
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WATANABE Tsuneo
Department of Applied Electronics, Tokyo University of Science
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Watanabe Tsuneo
Departmen of Electrical Engineering, Tokyo Metropolitan University
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Mukuda Hidekazu
Department of Materials Engineering Science, Osaka University
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