半導体デバイス内の発光分布と発光解析用顕微鏡で観測した光強度分布の光伝搬経路シミュレーションを用いた比較

概要

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The photoemission-intensity profiles emitted in MOSFET devices and the photo-intensity profiles observed by a photoemission microscope were compared by using the propagating optical path simulation, which takes into accounts of the partial reflection and the refracted transmission in the device medium with respect to the incident angle 4, 5). Wavelength dependent photoemission-intensity profiles emitted from the device were simulated for several wavelengths, and then those profiles were integrated depending on the spectral response curve of the photoemission microscope to obtain the observable photo-intensity profile. The simulated results proved that the photoemission peak location in MOSFET precisely corresponds to the photo-intensity peak position observed by the photoemission microscope.
日本シミュレーション学会の論文
2002-03-15