半導体デバイス内の光伝搬経路と光量強度分布の一解析法

概要

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Outside observations of the image of photoemission arising from semiconductor devices, for example, hot-electron effects near depletion layer have been performed using photoemission microscopes. But the optical propagation mechanism inside the devices has not been sufficiently analysed. We have analysed the propagating path inside the devices and considered the relation between proper photoemission source and the image observed from outside of the devices. Optical beams emitted from a linear shape source, in which an intensity distribution of photoemission is a triangle, propagated and refracted at boundaries. By superposing point sources and extrapolating the optical path reaching outside the devices, we have made the microscope image of each focus plane corresponding to intensity distributions of photoemission inside devices, according to the following process. (1) Dividing the area of a two-dimensional device by straight line or arc line to finite elements. (2) Assuming refractive index for each element. (3) Following the optical path undertaking attenuation and refraction from a photoemission source point. (4) Extrapolating the optical path reaching outside of the device, to recognize the image of photoemission on each focus plane. (5) Repeating the steps (3)-(4) by changing the angle and position of photoemission.
日本シミュレーション学会の論文
1999-06-15